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2SK2885 Folha de dados(PDF) 4 Page - Hitachi Semiconductor |
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2SK2885 Folha de dados(HTML) 4 Page - Hitachi Semiconductor |
4 / 7 page 2SK2885(L), 2SK2885(S) 4 Main Characteristics 100 75 50 25 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area 1000 300 100 30 10 1 0.3 0.1 3 Ta = 25 °C 1 shot pulse 10 µs 100 µs 1 ms PW = 10 ms DC Operation (Tc = 25 °C) Operation in this area is limited by R DS(on) Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 DM P PW T D = PW T ch – c(t) = s (t) • ch – c ch – c = 1.67 °C/W, Tc = 25 °C θ γ θ θ Tc = 25 °C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse |
Nº de peça semelhante - 2SK2885 |
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Descrição semelhante - 2SK2885 |
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