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STP13NK60ZT4 Folha de dados(PDF) 6 Page - STMicroelectronics

Nome de Peças STP13NK60ZT4
Descrição Electrónicos  N-channel 600 V, 0.48, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH Power MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP13NK60ZT4 Folha de dados(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP
6/18
Doc ID 8527 Rev 7
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD= 300 V, ID= 5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 20)
-
22
14
-
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=300 V, ID= 5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 20)
-
61
12
-
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=480 V, ID= 10 A,
RG=4.7 Ω, VGS=10 V
(see Figure 20)
-
10
9
20
-
ns
ns
ns
Table 7.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-source breakdown
voltage
Igs=±1mA
(open drain)
30
-
-
V
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
-
10
40
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 10 A, VGS=0
-1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 10 A,
di/dt = 100 A/µs,
VDD=35 V, Tj=150 °C
-
570
4.5
16
ns
µC
A


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