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STP13NK60ZT4 Folha de dados(PDF) 6 Page - STMicroelectronics |
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STP13NK60ZT4 Folha de dados(HTML) 6 Page - STMicroelectronics |
6 / 18 page Electrical characteristics STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP 6/18 Doc ID 8527 Rev 7 The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD= 300 V, ID= 5 A, RG=4.7 Ω, VGS=10 V (see Figure 20) - 22 14 - ns ns td(off) tf Turn-off delay time Fall time VDD=300 V, ID= 5 A, RG=4.7 Ω, VGS=10 V (see Figure 20) - 61 12 - ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD=480 V, ID= 10 A, RG=4.7 Ω, VGS=10 V (see Figure 20) - 10 9 20 - ns ns ns Table 7. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO Gate-source breakdown voltage Igs=±1mA (open drain) 30 - - V Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 10 40 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 10 A, VGS=0 -1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 10 A, di/dt = 100 A/µs, VDD=35 V, Tj=150 °C - 570 4.5 16 ns µC A |
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Descrição semelhante - STP13NK60ZT4 |
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