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IRF7751PBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRF7751PBF Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 8 page  HEXFET® Power MOSFET HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, provides the de- signer with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. IRF7751PbF Description l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Lead-Free TSSOP-8 Parameter Max. Units VDS Drain-Source Voltage -30 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -4.5 ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -3.6 A IDM Pulsed Drain Current -18 PD @TA = 25°C Power Dissipation 1.0 PD @TA = 70°C Power Dissipation 0.64 Linear Derating Factor 0.008 W/°C VGS Gate-to-Source Voltage ±20 V TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C Parameter Max. Units RθJA Maximum Junction-to-Ambient 125 °C/W Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 05/14/09 VDSS RDS(on) max ID -30V 35m Ω@VGS = -10V -4.5A 55m Ω@VGS = -4.5V -3.8A #Ã2ÃB "Ã2ÃT !Ã2ÃT Ã2Ã9 ! " # $ % & ' $Ã2ÃB! %Ã2ÃT! &Ã2ÃT! 'Ã2Ã9! PD - 96015A |
Nº de peça semelhante - IRF7751PBF |
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Descrição semelhante - IRF7751PBF |
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