BD243C datasheet(2/4 Pages) BOURNS

Nome de Peças	BD243C

Descrição Electrónicos	Designed for Complementary Use with the BD244 Series

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Fabricante Electrônico	BOURNS [Bourns Electronic Solutions]

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BD243, BD243A, BD243B, BD243C

NPN SILICON POWER TRANSISTORS

2

PRODU CT

INFORMA TION

JUNE 1973 - REVISED

NOVEMBER 2012

Specifications are subject to change without notice.

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = 30 mA

(see Note 5)

IB = 0

BD243

BD243A

BD243B

BD243C

45

60

80

100

V

ICES

Collector-emitter

cut-off current

VCE = 55 V

VCE = 70 V

VCE = 90 V

VCE =115 V

VBE =0

BD243

BD243A

BD243B

BD243C

0.4

mA

ICEO

Collector cut-off

current

VCE = 30 V

VCE = 60 V

IB =0

BD243/243A

BD243B/243C

0.7

mA

IEBO

Emitter cut-off

current

VEB =

5 V

IC =0

1

mA

hFE

Forward current

transfer ratio

VCE =

4 V

VCE =

4 V

IC = 0.3 A

IC = 3 A

(see Notes 5 and 6)

30

15

VCE(sat)

Collector-emitter

saturation voltage

IB =

1 A

IC = 6 A

(see Notes 5 and 6)

1.5

V

VBE

Base-emitter

voltage

VCE =

4 V

IC = 6 A

(see Notes 5 and 6)

2

V

hfe

Small signal forward

current transfer ratio

VCE = 10 V

IC = 0.5 A

f = 1 kHz

20

|h

fe|

Small signal forward

current transfer ratio

VCE = 10 V

IC = 0.5 A

f = 1 MHz

3

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1.92

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS †

MIN

TYP

MAX

UNIT

ton

Turn-on time

IC = 1 A

VBE(off) = -3.7 V

IB(on) = 0.1 A

RL = 20 Ω

IB(off) = -0.1 A

tp = 20 µs, dc ≤ 2%

0.3

µs

toff

Turn-off time

1µs

OBSOLET

E

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