BC847 datasheet(1/13 Pages) ONSEMI

Nome de Peças	BC847

Descrição Electrónicos	General Purpose Transistors

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November, 2011 − Rev. 8

1

Publication Order Number:

BC846AWT1/D

BC846, SBC846, BC847,

SBC847, BC848 Series

General Purpose

Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

Features

• AEC−Q101 Qualified and PPAP Capable

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BC846, SBC846

BC847, SBC847

BC848

VCEO

65

45

30

V

Collector-Base Voltage

BC846, SBC846

BC847, SBC847

BC848

VCBO

80

50

30

V

Emitter-Base Voltage

BC846, SBC846

BC847, SBC847

BC848

VEBO

6.0

5.0

V

Collector Current − Continuous

IC

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board,

(Note 1) TA = 25°C

PD

150

mW

Thermal Resistance,

Junction−to−Ambient

RqJA

833

°C/W

Junction and Storage Temperature

TJ, Tstg

−55 to

+150

°C

1. FR−5 = 1.0 x 0.75 x 0.062 in.

http://onsemi.com

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

XX

= Specific Device Code

M

= Month Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

XX MG

G

COLLECTOR

3

1

BASE

2

EMITTER

1

2

3

See detailed ordering and shipping information in the package

dimensions section on page 12 of this data sheet.

ORDERING INFORMATION

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