N-CHANNEL

POWER MOSFET

unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain(“Miller”) Charge

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

BV

DSS

BV/ T

J

V

GS(th)

R

DS(on)

I

GSS

I

DSS

V

V/

V

nA

A

pF

ns

nC

--

--

--

--

--

--

--

--

--

--

--

--

--

V

A

I

A

See Fig 7

V

A

V

V

V

V

V

V

V

R

See Fig 13

V

I

See Fig 6 & Fig 12

Drain-to-Source Leakage Current

V

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

Q

rr

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

--

--

--

--

--

A

V

ns

C

Integral reverse pn-diode

in the MOSFET

T

,I

T

,I

di

s

∆

∆

Ω

Ω

µ

O

4

O

5

µ

µ

O

4

O

4

O

4

O

4

O

1

Ω

µ

O

5

O

4

µ

µ

IRFW/I530A

100

--

2.0

--

--

--

--

--

0.11

--

--

--

--

--

150

62

13

14

55

36

27

4.5

12.8

--

--

4.0

100

-100

10

100

0.11

--

790

175

72

40

40

110

80

36

--

--

10.25

610

--

--

--

109

0.41

14

56

1.5

--

--

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

L=2mH, I

, Starting T

I

SD

14A, di/dt

350A/ s, V

DD

BV

Pulse Test : Pulse Width = 250 s, Duty Cycle

2%

Essentially Independent of Operating Temperature

<

_

<

_

<

_

<

_

O

1

O

2

O

3

O

4

O

5

Ω

µ

µ