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2SD1213_2015 Folha de dados(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Nome de Peças 2SD1213_2015
Descrição Electrónicos  Silicon NPN Power Transistors
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Fabricante Electrônico  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Página de início  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

2SD1213_2015 Folha de dados(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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Product Specification
www.jmnic.com
JMnic
Silicon NPN Power Transistors
2SD1213
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=∞
30
V
VCBO
Collector-base breakdown voltage
IC=1mA; IE=0
60
V
VEBO
Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=8A; IB=0.4A
0.4
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
70
280
hFE-2
DC current gain
IC=10A ; VCE=2V
30
fT
Transition frequency
IC=1A ; VCE=5V
120
MHz
Switching times
ton
Turn-on time
0.3
μs
ts
Storage time
0.6
μs
tf
Fall time
IC=10A
IB1=-IB2=-0.5A
0.02
μs
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280


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