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BF862_2015 Folha de dados(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF862_2015 Folha de dados(HTML) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
6 / 12 page 2000 Jan 05 6 Philips Semiconductors Product specification N-channel junction FET BF862 handbook, halfpage −1 30 20 10 0 −0.8 0 typ min −0.6 −0.4 −0.2 MCD813 VGS (V) ID (mA) max Fig.7 Drain current as a function of gate-source voltage; typical values. VDS = 8 V; Tj =25 °C. handbook, halfpage 20 04 12 0 8 4 8 12 16 MCD814 VDS (V) ID (mA) VGS = 0 V −0.1 V −0.2 V −0.3 V −0.4 V −0.5 V Fig.8 Drain current as a function of drain-source voltage; typical values. VDS = 8 V; Tj =25 °C. handbook, halfpage 25 0 510 15 VDG (V) IG (nA) 20 −104 −102 −1 −10−2 −10−4 MCD815 10 mA 1 mA 0.1 mA IGSS ID = 20 mA Fig.9 Gate current as a function of drain-gate voltage; typical values. VDS = 8 V; Tj =25 °C. handbook, halfpage −8 −6 −40 Cis Crs VGS (V) C (pF) 12 0 4 8 −2 MCD816 Fig.10 Input and reverse transfer capacitance as functions of gate-source voltage; typical values. VDS = 8 V; f = 1 MHz; Tj =25 °C. |
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