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BF998_2015 Folha de dados(PDF) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF998_2015 Folha de dados(HTML) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
8 / 12 page 1996 Aug 01 8 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R handbook, full pagewidth MGE802 330 k Ω 1.8 k Ω 360 Ω 100 k Ω 140 k Ω 1 nF 1 nF 47 µF 20 µH 1 nF 10 pF D2 BB405 330 k Ω 1 nF 1 nF Vtun output 50 Ω output C1 5.5 pF 50 Ω input VDD VDD Vagc 47 k Ω 1 nF 1 nF 1 nF L2 L1 1 nF 15 pF D1 BB405 Vtun input VDD = 12 V; GS = 2 mS; GL = 0.5 mS. L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm. L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm. Tapped at approximately half a turn from the cold side, to adjust GL = 0.5 mS. C1 adjusted for GS = 2 mS. Fig.17 Gain control test circuit at f = 200 MHz. |
Nº de peça semelhante - BF998_2015 |
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Descrição semelhante - BF998_2015 |
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