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BF998WR_2015 Folha de dados(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF998WR_2015 Folha de dados(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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3 / 12 page  1997 Sep 05 3 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V ID drain current − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation up to Tamb =45 °C; see Fig.2; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − +150 °C Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 0 MLD154 150 400 200 300 100 Ptot (mW) T ( C) amb o |
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Descrição semelhante - BF998WR_2015 |
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