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FQD17N08L Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FQD17N08L
Descrição Electrónicos  N-Channel QFET MOSFET 80 V, 12.9 A, 100 m
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD17N08L Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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November 2013
Thermal Characteristics
Symbol
Parameter
FQD17N08LTM
Unit
RJC
Thermal Resistance, Junction to Case, Max.
3.13
oC/W
RJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
110
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
50
FQD17N08L
N-Channel QFET® MOSFET
80 V, 12.9 A, 100 mΩ
Description
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
• 12.9 A, 80 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V,
ID = 6.45 A
• Low Gate Charge (Typ. 8.8 nC)
• Low Crss (Typ. 29 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings T
C = 25°C unless otherwise noted.
D-PAK
G
S
D
G
S
D
©2000 Fairchild Semiconductor Corporation
FQD17N08L Rev. C1
Symbol
Parameter
FQD17N08L
TM
Unit
VDSS
Drain-Source Voltage
80
V
ID
Drain Current
- Continuous (TC = 25°C)
12.9
A
- Continuous (TC = 100°C)
8.2
A
IDM
Drain Current
- Pulsed
(Note 1)
51.6
A
VGSS
Gate-Source Voltage
± 20
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
100
mJ
IAR
Avalanche Current
(Note 1)
12.9
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
6.5
V/ns
PD
Power Dissipation (TA = 25°C) *
2.5
W
Power Dissipation (TC = 25°C)
40
W
- Derate above 25°C
0.32
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
300
°C


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