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VNH7013XP-E Folha de dados(PDF) 9 Page - STMicroelectronics

Nome de Peças VNH7013XP-E
Descrição Electrónicos  Automotive integrated H-bridge
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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VNH7013XP-E Folha de dados(HTML) 9 Page - STMicroelectronics

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VNH7013XP-E
Electrical specifications
Doc ID 022370 Rev 3
9/24
Table 7.
Gate resistance
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
RG_HS
Gate resistance HS
VDD =15V; fgate =1 MHz
—20
Ω
RG_LS
Gate resistance LS
13
Ω
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VSD
(1)
1.
Pulse width limited by safe operating area.
Forward on voltage
ISD =20A; VGS =0 V;
Tj =25°C
—0.9
1.1
V
trr
Reverse recovery time
ISD = 20 A; di/dt = 100 A/µs;
VDD =20V; Tj = 150 °C
(see
Figure 10)
—50
ns
Qrr
Reverse recovery charge
28
nC
IRRM
Reverse recovery current
0.8
A
Table 9.
Switching on HSD
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn on delay time
VDD =15V; ID =20A;
RG =4.7 Ω; VGS =10V
53
ns
tr
Rise time
319
ns
Qg
Total gate charge
VDD =15 V; ID =20 A;
VGS =10V
(see
Figure 4 and Figure 9)
—36
nC
Qgs
Gate-source charge
8.5
nC
Qgd
Gate-drain charge
5
nC
Table 10.
Switching on LSD
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn on delay time
VDD =15V; ID =20A;
RG =4.7 Ω; VGS =10V
53
ns
tr
Rise time
430
ns
Qg
Total gate charge
VDD =15V; ID =20A;
VGS =10V
(see
Figure 5 and Figure 9)
—23
nC
Qgs
Gate-source charge
6
nC
Qgd
Gate-drain charge
2.5
nC
Table 11.
Switching off HSD
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(off)
Turn-off delay time
VDD =15V; ID =20A;
RG =4.7 Ω; VGS =10V
(see
Figure 11)
—253
ns
tf
Fall time
169
ns


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