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BZX55-C2V4 Folha de dados(PDF) 2 Page - MAKO SEMICONDUCTOR CO.,LIMITED

Nome de Peças BZX55-C2V4
Descrição Electrónicos  Silicon Planar Power Zenver Diodes
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Fabricante Electrônico  MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]
Página de início  http://www.makosemi.hk/
Logo MAKOSEMI - MAKO SEMICONDUCTOR CO.,LIMITED

BZX55-C2V4 Folha de dados(HTML) 2 Page - MAKO SEMICONDUCTOR CO.,LIMITED

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ELECTRICAL CHARACTERISTICS @25°C Maximum VF=1.5V at IF=200mA
MCC
PART
NUMBER
ZENER VOLTAGE
RANGE
(1) at I
ZT
VZ (V)
TEST
CURRENT
IZT
MAXIMUM DYNAMIC
RESISTANCE
f=1.0kHz
IZ=5.0mA
IZ=1.0mA
TEMP. COEFFICIENT OF
ZENER VOLTAGE at
IZ=5mA
VZ (%/
OC)
REVERSE
LEAKAGE
CURRENT
IR
TEST
CURRENT
VR
MIN.
MAX.
mA
OHMS
OHMS
MIN.
MAX.
nA
V
BZX55-C2V4
2.28
2.56
5.0
85
600
-0.09
-0.06
50000
1.0
BZX55-C2V7
2.5
2.9
5.0
85
600
-0.09
-0.06
10000
1.0
BZX55-C3V0
2.8
3.2
5.0
85
600
-0.08
-0.05
4000
1.0
BZX55-C3V3
3.1
3.5
5.0
85
600
-0.08
-0.05
2000
1.0
BZX55-C3V6
3.4
3.8
5.0
85
600
-0.08
-0.05
2000
1.0
BZX55-C3V9
3.7
4.1
5.0
85
600
-0.08
-0.05
2000
1.0
BZX55-C4V3
4.0
4.6
5.0
75
600
-0.06
-0.03
1000
1.0
BZX55-C4V7
4.4
5.0
5.0
60
600
-0.05
+0.02
500
1.0
BZX55-C5V1
4.8
5.4
5.0
35
550
-0.02
+0.02
100
1.0
BZX55-C5V6
5.2
6.0
5.0
25
450
-0.05
+0.05
100
1.0
BZX55-C6V2
5.8
6.6
5.0
10
200
+0.03
+0.06
100
2.0
BZX55-C6V8
6.4
7.2
5.0
8.0
150
+0.03
+0.07
100
3.0
BZX55-C7V5
7.0
7.9
5.0
7.0
50
+0.03
+0.07
100
5.0
BZX55-C8V2
7.7
8.7
5.0
7.0
50
+0.03
+0.08
100
6.2
BZX55-C9V1
8.5
9.6
5.0
10
50
+0.03
+0.09
100
6.8
BZX55-C10
9.4
10.6
5.0
15
70
+0.03
+0.11
100
7.5
BZX55-C11
10.4
11.6
5.0
20
70
+0.03
+0.11
100
8.2
BZX55-C12
11.4
12.7
5.0
20
90
+0.03
+0.11
100
9.1
BZX55-C13
12.4
14.1
5.0
26
110
+0.03
+0.11
100
10
BZX55-C15
13.8
15.6
5.0
30
110
+0.03
+0.11
100
11
BZX55-C16
15.3
17.1
5.0
40
170
+0.03
+0.11
100
12
BZX55-C18
16.8
19.1
5.0
40
170
+0.03
+0.11
100
13
BZX55-C20
18.8
21.2
5.0
55
220
+0.03
+0.11
100
15
BZX55-C22
20.8
23.3
5.0
55
220
+0.03
+0.11
100
16
BZX55-C24
22.8
25.6
5.0
80
220
+0.04
+0.12
100
18
BZX55-C27
25.1
28.9
5.0
80
220
+0.04
+0.12
100
20
BZX55-C30
28
32
5.0
80
220
+0.04
+0.12
100
22
BZX55-C33
31
35
5.0
80
220
+0.04
+0.12
100
24
BZX55-C36
34
38
5.0
80
220
+0.04
+0.12
100
27
BZX55-C39
37
41
2.5
90
(2)
500
(3)
+0.04
+0.12
100
30
BZX55-C43
40
46
2.5
90
(2)
600
(3)
+0.04
+0.12
100
33
BZX55-C47
44
50
2.5
110
(2)
700
(3)
+0.04
+0.12
100
36
BZX55-C51
48
54
2.5
125
(2)
700
(2)
+0.04
+0.12
100
39
BZX55-C56
52
60
2.5
135
(2)
1000
(2)
+0.04
+0.12
100
43
BZX55-C62
58
66
2.5
150
(2)
1000
(2)
+0.04
+0.12
100
47
BZX55-C68
64
72
2.5
200
(2)
1000
(2)
+0.04
+0.12
100
51
BZX55-C75
70
79
2.5
250
(2)
1500
(2)
+0.04
+0.12
100
56
Note: (1) Measured with pulses tp=5.0ms, BZX55A------±1% of VZnom , BZX55B------±2% of VZnom, BZX55C------±5% of VZnom
(2) at IZ=2.5mA
(3) at IZ=0.5mA
BZX55-C2V4 thru BZX55-C75
WWW.MAKOSEMI.HK
Revision: 5


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