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GMA1162 Folha de dados(PDF) 1 Page - Guilin Strong Micro-Electronics Co., Ltd. |
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GMA1162 Folha de dados(HTML) 1 Page - Guilin Strong Micro-Electronics Co., Ltd. |
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1 / 2 page  桂 林 斯 壯 微 電 子 有 限 責 任 公 司 Guilin Strong Micro-Electronics Co.,Ltd. GMA1162(销售型號 2SA1162) ■ FEATURES 特點 PNP General Purpose Transistor ■ MAXIMUM RATINGS 最大額定值 Characteristic 特性參數 Symbol 符號 Rating 額定值 Unit 單位 Collector-Emitter Voltage 集電極 -發射極電壓 VCEO -50 V Collector-Base Voltage 集電極 -基極電壓 VCBO -50 V Emitter-Base Voltage 發射極 -基極電壓 VEBO -5.0 V Collector Current-Continuous 集電極電流 -連續 Ic -150 mA ■ THERMAL CHARACTERISTICS 熱特性 Characteristic 特性參數 Symbol 符號 Max 最大值 Unit 單位 Total Device Dissipation 總耗散功率 FR-5 Board(1) TA =25℃環境溫度爲 25℃ Derate above25℃ 超過 25℃遞減 PD 225 1.8 mW mW/℃ Total Device Dissipation 總耗散功率 Alumina Substrate 氧化鋁襯底,(2)TA =25℃ Derate above25℃ 超過 25℃遞減 PD 300 2.4 mW mW/℃ Thermal Resistance Junction to Ambient 熱阻 R ΘJA 417 ℃ /W Junction and Storage Temperature 結溫和儲存溫度 TJ,Tstg -55to+150℃ |
Nº de peça semelhante - GMA1162 |
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Descrição semelhante - GMA1162 |
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