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FDS4559_F085 Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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FDS4559_F085 Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) WDSS Single Pulse Drain-Source Avalanche Energy VDD = 30 V, ID = 4.5 A Q1 90 mJ IAR Maximum Drain-Source Avalanche Current Q1 4.5 A Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA Q1 Q2 60 –60 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25 °C ID = –250 µA, Referenced to 25 °C Q1 Q2 58 –49 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V VDS = –48 V, VGS = 0 V Q1 Q2 1 –1 µA IGSS Gate-Body Leakage VGS = +20 V, VDS = 0 V VGS = +20 V, VDS = 0 V Q1 Q2 +100 +100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA VDS = VGS, ID = –250 µA Q1 Q2 1 –1 2.2 –1.6 3 –3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25 °C ID = –250 µA, Referenced to 25 °C Q1 Q2 –5.5 4 mV/ °C Q1 42 72 55 55 94 75 RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A VGS = 10 V, ID = 4.5 A, TJ = 125 °C VGS = 4.5 V, ID = 4 A VGS = –10 V, ID = –3.5 A VGS = –10 V, ID = –3.5 A, TJ = 125 °C VGS = –4.5 V, ID = –3.1 A Q2 82 130 105 105 190 135 m Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V VGS = –10 V, VDS = –5 V Q1 Q2 20 –20 A gFS Forward Transconductance VDS = 10 V, ID = 4.5 A VDS = –5 V, ID = –3 5 A Q1 Q2 14 9 S Dynamic Characteristics Ciss Input Capacitance Q1 Q2 650 759 pF Coss Output Capacitance Q1 Q2 80 90 pF Crss Reverse Transfer Capacitance Q1 VDS = 25 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = –30 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 35 39 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time Q1 Q2 11 7 20 14 ns tr Turn-On Rise Time Q1 Q2 8 10 18 20 ns td(off) Turn-Off Delay Time Q1 Q2 19 19 35 34 ns tf Turn-Off Fall Time Q1 VDD = 30 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2 VDD = –30 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω Q1 Q2 6 12 15 22 ns Qg Total Gate Charge Q1 Q2 12.5 15 18 21 nC Qgs Gate-Source Charge Q1 Q2 2.4 2.5 nC Qgd Gate-Drain Charge Q1 VDS = 30 V, ID = 4.5 A, VGS = 10 V Q2 VDS = –30 V, ID = –3.5 A, VGS = –10V Q1 Q2 2.6 3.0 nC FDS4559_F085 Rev A (W) |
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