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TP28F010-90 Folha de dados(PDF) 1 Page - Intel Corporation

Nome de Peças TP28F010-90
Descrição Electrónicos  28F010 1024K (128K X 8) CMOS FLASH MEMORY
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Fabricante Electrônico  INTEL [Intel Corporation]
Página de início  http://www.intel.com
Logo INTEL - Intel Corporation

TP28F010-90 Folha de dados(HTML) 1 Page - Intel Corporation

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E
December 1997
Order Number: 290207-012
8
n Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
n Quick-Pulse Programming Algorithm
10 µs Typical Byte-Program
2 Second Chip-Program
n 100,000 Erase/Program Cycles
n 12.0 V ±5% VPP
n High-Performance Read
90 ns Maximum Access Time
n CMOS Low Power Consumption
10 mA Typical Active Current
50 µA Typical Standby Current
0 Watts Data Retention Power
n Integrated Program/Erase Stop Timer
n Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
n Noise Immunity Features
±10% VCC Tolerance
Maximum Latch-Up Immunity
through EPI Processing
n ETOX™ Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
n JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
n Extended Temperature Options
Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases
memory flexibility, while contributing to time and cost savings.
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel’s 28F010 is
offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC
standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the
28F010 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into
power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved
through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on
address and data pins, from –1 V to VCC + 1 V.
With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
28F010 1024K (128K X 8) CMOS
FLASH MEMORY


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