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2SA1532-C Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças 2SA1532-C
Descrição Electrónicos  PNP Transistors
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1532-C Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SA1532-C Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SA1532-C Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
Transistors
PNP Transistors
2SA1532
Features
High transition frequency fT.
Complementary to 2SC3930
1.Base
2.Emitter
3.Colletor
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-30
Collector - Emitter Voltage
VCEO
-20
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-30
mA
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
V
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-30
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA,IB= 0
-20
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -30 V , IE=0
-0.1
Collector-Emitter cut-off current
ICEO
VCE= -20 V , IB=0
-100
Emitter cut-off current
IEBO
VEB= -5V , IC=0
-0.1
Collector-emitter saturation voltage
VCE(sat) IC=-10 mA, IB=-1 mA
-0.1
Base - emitter saturation voltage
VBE(sat) IC=-10 mA, IB=-1 mA
-1.2
Base - emitter voltage
VBE
VCE= -10V, IC= -1mA
-0.7
DC current gain
hFE
VCE= -10V, IC= -1mA
70
220
Noise Figure
NF
VCB = –10V, IE = 1mA, f = 5MHz
2.8
4
dB
Reverse transfer impedance
Zrb
VCB = –10V, IE = 1mA, f = 2MHz
22
60
Ω
Common emitter reverse transfer
capacitance
Cre
VCE = –10V, IC = –1mA
f = 10.7MHz
1.2
2
pF
Transition frequency
fT
VCE= -10V, IE= 1mA,f=200MHz
150
300
MHz
V
uA
V
Classification of hfe
Type
2SA1532-B
2SA1532-C
Range
70-140
110-220
Marking
EB
EC


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