MTBA5C10V8-0-T6-G datasheet(9/13 Pages) CYSTEKEC

Nome de Peças	MTBA5C10V8-0-T6-G

Descrição Electrónicos	N- AND P-Channel Logic Level Enhancement Mode MOSFET

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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9 / 13 page

CYStech Electronics Corp.

Spec. No. : C744V8

Issued Date : 2014.11.03

Revised Date :

Page No. : 9/13

MTBA5C10V8

CYStek Product Specification

Typical Characteristics(Cont.) : Q2(P-channel)

Capacitance vs Drain-to-Source Voltage

10

100

1000

10000

0.1

1

10

100

-VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

1.6

-75 -50 -25

0

25 50

75 100 125 150 175 200

Tj, Junction Temperature(°C)

ID=-250μA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001

0.01

0.1

1

10

-ID, Drain Current(A)

VDS=-5V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

2

4

6

8

10

0

4

8

12

16

20

24

Qg, Total Gate Charge(nC)

ID=-1.7A

VDS=-80V

Maximum Safe Operating Area

0.001

0.01

0.1

1

10

100

0.1

1

10

100

1000

-VDS, Drain-Source Voltage(V)

TA=25°C, Tj=150°C

VGS=-10V, θJA=84°C/W

Single Pulse

DC

RDSON

Limite

100μs

1ms

10ms

100ms

1s

Maximum Drain Current vs Junction Temperature

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

25

50

75

100

125

150

175

Tj, Junction Temperature(°C)

TA=25°C

VGS=-10V

RθJA=84°C/W

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MTBA5C10V8-0-T6-G Folha de dados(PDF) 9 Page - Cystech Electonics Corp.

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