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MTBA6C15Q8-0-T3-G Folha de dados(PDF) 4 Page - Cystech Electonics Corp.

Nome de Peças MTBA6C15Q8-0-T3-G
Descrição Electrónicos  N- AND P-Channel Logic Level Enhancement Mode MOSFET
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Fabricante Electrônico  CYSTEKEC [Cystech Electonics Corp.]
Página de início  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTBA6C15Q8-0-T3-G Folha de dados(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C938Q8
Issued Date : 2014.12.01
Revised Date :
Page No. : 4/12
MTBA6C15Q8
CYStek Product Specification
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
0
2
4
6
8
10
012
345
VDS, Drain-Source Voltage(V)
VGS=2.5V
10V, 9V, 8V, 7V, 6V, 5V,4V,3V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25 50
75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
1000
0.01
0.1
1
10
100
ID, Drain Current(A)
VGS=3V
VGS=4.5V
10V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02468
1
IDR, Reverse Drain Current(A)
0
Tj=25°C
Tj=150°C
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
50
100
150
200
250
300
350
400
450
500
02
4
6
8
10
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.8
1.2
1.6
2
2.4
2.8
-75 -50 -25
0
25 50
75 100 125 150 175 200
Tj, Junction Temperature(°C)
VGS=10V, ID=1.8A
RDS(ON)@Tj=25°C : 169mΩ typ.
VGS, Gate-Source Voltage(V)
ID=1.8A


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