MTBA6C12J4-0-T3-G datasheet(8/13 Pages) CYSTEKEC

Nome de Peças	MTBA6C12J4-0-T3-G

Descrição Electrónicos	N P-Channel Enhancement Mode Power MOSFET

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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8 / 13 page

CYStech Electronics Corp.

Spec. No. : C973J4

Issued Date : 2014.06.13

Revised Date : 2014.10.02

Page No. : 8/13

MTBA6C12J4

CYStek Product Specification

Q2, P-CH Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10

100

1000

10000

0.1

1

10

100

-VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=-250μA

ID=-1mA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

100

0.001

0.01

0.1

1

10

-ID, Drain Current(A)

VDS=-10V

Pulsed

TA=25°C

Gate Charge Characteristics

0

2

4

6

8

10

0246

8

10

12

14

Qg, Total Gate Charge(nC)

ID=-1.5A

VDS=-96V

VDS=-60V

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.1

1

10

100

1000

-ID, Drain-Source Voltage(V)

DC

10ms

100ms

100μs

TA=25°C, Tj=150°C, VGS=-10V

θJA=90°C/W, Single Pulse

1s

1ms

Maximum Drain Current vs Junction Temperature

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

25

50

75

100

125

150

175

Tj, Junction Temperature(°C)

TA=25°C, Tj(max)=150°C,VGS=-10V

RθJA=90°C/W

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