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IRF830S Folha de dados(PDF) 6 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças IRF830S
Descrição Electrónicos  N-Channel MOSFET
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

IRF830S Folha de dados(HTML) 6 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
6
MOSFET
N-Channel MOSFET
IRF830S (KRF830S)
■
Typical Characterisitics
Fig. 14 - For N-Channel
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
I
S D
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Dio de Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R g
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout con siderations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
Note
a. VGS = 5 V for logic level devices
V
DD


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