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IRF1404Z Folha de dados(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças IRF1404Z
Descrição Electrónicos  N-Channel MOSFET
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

IRF1404Z Folha de dados(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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MOSFET
.
N-Channel MOSFET
IRF1404Z (KRF1404Z)
■
Typical Characterisitics
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.2
0.6
1.0
1.4
1.8
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
TJ = 25°C
TJ = 175°C
VGS = 0V
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
40
80
120
160
200
LIMITED BY PACKAGE
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
ID = 75A
VGS = 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc


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