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SI2302DS-3 Folha de dados(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2302DS-3 Folha de dados(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
3 / 4 page SMD Type www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 On-Resistance vs. Drain Current s c it s ir e t c a r a h C r e f s n a r T s c it s ir e t c a r a h C t u p t u O VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 0 2 4 6 8 10 0 1 2 3 4 5 TC = 125 C –55 C 0, 0.5, 1 V VGS = 5 thru 2.5 V 1.5 V 2 V 0 200 400 600 800 1000 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 0 50 100 150 0 1 2 3 4 5 0 1 2 3 4 5 6 7 0 0.03 0.06 0.09 0.12 0.15 0 2 4 6 8 10 Gate Charge Qg – Total Gate Charge (nC) VDS – Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 10 V ID = 3.6 A ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A TJ – Junction Temperature ( C) VGS = 2.5 V VGS = 4.5 V 25 C 。 。 。 。 SI2302DS (KI2302DS) N-Channel Enhancement MOSFET |
Nº de peça semelhante - SI2302DS-3 |
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Descrição semelhante - SI2302DS-3 |
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