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IRF120 Folha de dados(PDF) 2 Page - Intersil Corporation

Nome de Peças IRF120
Descrição Electrónicos  8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs
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Fabricante Electrônico  INTERSIL [Intersil Corporation]
Página de início  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF120 Folha de dados(HTML) 2 Page - Intersil Corporation

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2-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF120
IRF121
IRF122
IRF123
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS
100
80
100
80
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
100
80
100
80
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
9.2
6.5
9.2
6.5
8.0
5.6
8.0
5.6
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
37
37
32
32
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
±20
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
60
60
60
60
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.4
0.4
0.4
0.4
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS
36
36
36
36
mJ
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
-55 to 175
-55 to 175
-55 to 175
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
300
260
300
260
300
260
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 150oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
(Figure 10)
IRF120, IRF122
100
-
-
V
IRF121, IRF123
80
-
-
V
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
IRF120, IRF121
9.2
-
-
A
IRF122, IRF123
8.0
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON) ID = 5.6A, VGS = 10V
(Figure 8, 9)
IRF120, IRF121
-
0.25
0.27
IRF122, IRF123
0.27
0.36
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 5.6A
(Figure 12)
2.9
4.0
-
S
Turn-On Delay Time
td(ON)
VDD = 50V, ID ≈ 9.2A, RGS = 18Ω, RL = 5.1Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-
8.8
13
ns
Rise Time
tr
-30
45
ns
Turn-Off Delay Time
td(OFF)
-19
29
ns
Fall Time
tf
-20
30
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT) VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS,
Ig(REF) = 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
9.7
15
nC
Gate to Source Charge
Qgs
-
2.2
-
nC
Gate to Drain “Miller” Charge
Qgd
-
2.3
-
nC
IRF120, IRF121, IRF122, IRF123


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