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IRF121 Folha de dados(PDF) 2 Page - Intersil Corporation |
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IRF121 Folha de dados(HTML) 2 Page - Intersil Corporation |
2 / 7 page 2-2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF120 IRF121 IRF122 IRF123 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS 100 80 100 80 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR 100 80 100 80 V Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 9.2 6.5 9.2 6.5 8.0 5.6 8.0 5.6 A A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM 37 37 32 32 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD 60 60 60 60 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 0.4 0.4 0.4 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS 36 36 36 36 mJ Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG -55 to 175 -55 to 175 -55 to 175 -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 150oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) IRF120, IRF122 100 - - V IRF121, IRF123 80 - - V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 - 4.0 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V IRF120, IRF121 9.2 - - A IRF122, IRF123 8.0 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 5.6A, VGS = 10V (Figure 8, 9) IRF120, IRF121 - 0.25 0.27 Ω IRF122, IRF123 0.27 0.36 Ω Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = 5.6A (Figure 12) 2.9 4.0 - S Turn-On Delay Time td(ON) VDD = 50V, ID ≈ 9.2A, RGS = 18Ω, RL = 5.1Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature - 8.8 13 ns Rise Time tr -30 45 ns Turn-Off Delay Time td(OFF) -19 29 ns Fall Time tf -20 30 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature - 9.7 15 nC Gate to Source Charge Qgs - 2.2 - nC Gate to Drain “Miller” Charge Qgd - 2.3 - nC IRF120, IRF121, IRF122, IRF123 |
Nº de peça semelhante - IRF121 |
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Descrição semelhante - IRF121 |
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