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IRF121 Folha de dados(PDF) 3 Page - Intersil Corporation

Nome de Peças IRF121
Descrição Electrónicos  8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs
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Fabricante Electrônico  INTERSIL [Intersil Corporation]
Página de início  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF121 Folha de dados(HTML) 3 Page - Intersil Corporation

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2-3
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11)
-
350
-
pF
Output Capacitance
COSS
-
130
-
pF
Reverse Transfer Capacitance
CRSS
-36-
pF
Internal Drain Inductance
LD
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured From the
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad
-
12.5
-
nH
Thermal Resistance, Junction to Case
RθJC
-
-
2.5
oC/W
Thermal Resistance, Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
ISD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
-
-
8.0
A
Pulse Source to Drain Current
(Note 3)
ISDM
-
-
32
A
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25
oC, I
SD = 9.2A, VGS = 0V (Figure 13)
-
-
2.5
V
Reverse Recovery Time
trr
TJ = 25
oC, I
SD = 9.2A, dISD/dt = 100A/µs
55
110
240
ns
Reverse Recovery Charge
QRR
TJ = 25
oC, I
SD = 9.2A, dISD/dt = 100A/µs
0.25
0.53
1.10
µC
NOTES:
2. Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25
oC, L = 640µH, RG = 25Ω, peak IAS= 9.2A (Figures 15, 16).
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
LS
LD
G
D
S
D
G
S
IRF120, IRF121, IRF122, IRF123


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