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IRF130 Folha de dados(PDF) 2 Page - Intersil Corporation

Nome de Peças IRF130
Descrição Electrónicos  14A, 100V, 0.160 Ohm, N-Channel Power MOSFET
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Fabricante Electrônico  INTERSIL [Intersil Corporation]
Página de início  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF130 Folha de dados(HTML) 2 Page - Intersil Corporation

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2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRF130
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
100
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
14
9.9
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
56
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
79
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.53
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
50
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 150oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 10)
100
-
-
V
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
14
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = 8.3A, VGS = 10V (Figures 8, 9)
-
0.12
0.16
Forward Transconductance (Note 2)
gts
VDS ≥ 50V, ID = 8.3A (Figure 12)
4.6
6.9
-
S
Turn-On Delay Time
td(ON)
VDD = 50V, ID ≈ 14A, RG = 12Ω, RL = 3.5Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature
-
-
30
ns
Rise Time
tr
-
-
75
ns
Turn-Off Delay Time
td(OFF)
-
-
40
ns
Fall Time
tf
-
-
45
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 14A, VDS = 0.8 x Rated BVDSS,
Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating Temperature
-18
26
nC
Gate to Source Charge
Qgs
-
5.5
-
nC
Gate to Drain “Miller” Charge
Qgd
-11-
nC
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
-
600
-
pF
Output Capacitance
COSS
-
300
-
pF
Reverse Transfer Capacitance
CRSS
-
100
-
pF
Internal Drain Inductance
LD
Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured from the Source
Lead, 6mm (0.25in) from
the Flange and the Source
Bonding Pad
-
12.5
-
nH
Thermal Resistance, Junction to Case
RθJC
-
-
1.9
oC/W
Thermal Resistance, Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
LS
LD
G
D
S
IRF130


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