IRF330 datasheet(4/7 Pages) INTERSIL

Nome de Peças	IRF330

Descrição Electrónicos	5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

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Fabricante Electrônico	INTERSIL [Intersil Corporation]

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4

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2

µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

100

10

1

500

110

100

OPERATION IN THIS

AREA IS LIMITED

BY rDS(ON)

0.1

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25

oC

10

µs

100

µs

1ms

DC

TJ = MAX RATED

SINGLE PULSE

10ms

100ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

150

200

250

0

300

8

6

4

0

3

4.5V

2

10V

80

µs PULSE TEST

VGS = 5.5V

4V

5V

7

5

1

50

02

4

6

8

1

2

3

4

5

10

VDS, DRAIN TO SOURCE VOLTAGE (V)

80

µs PULSE TEST

VGS = 4.5V

VGS = 5V

VGS = 4V

VGS = 6V

VGS = -10V

0

23

4

7

1

0

3

4

VGS, GATE TO SOURCE VOLTAGE (V)

5

2

1

80ms PULSE TEST

VDS ≥ 50V

56

125oC

-55oC

25oC

ID, DRAIN CURRENT (A)

510

15

20

025

3

2

0

VGS = 20V

1

VGS = 10V

30

2.2

1.4

0.6

0

TJ, JUNCTION TEMPERATURE (

oC)

ID = 2.0A

1.8

1.0

0.2

-40

40

80

120

VGS = 10V

IRF330

Nº de peça semelhante - IRF330

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Samsung semiconductor	IRF330	208Kb / 5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF330	177Kb / 6P	N-Channel Power MOSFETs, 5.5A, 350 V/400V
International Rectifier	IRF330	146Kb / 7P	TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A)
Seme LAB	IRF330	96Kb / 3P	N-CHANNEL POWER MOSFET
New Jersey Semi-Conduct...	IRF330	848Kb / 3P	IRF330-333/IRF730-733 MTM/MTP5N35/5N40 N-Channel Power MOSFETs

More results

Descrição semelhante - IRF330

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Intersil Corporation	BUZ60	41Kb / 5P	5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET October 1998
Intersil Corporation	IRF730	54Kb / 7P	5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET July 1999
New Jersey Semi-Conduct...	IRFF330	1,005Kb / 3P	3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
Unisonic Technologies	UF730	167Kb / 6P	5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET
Intersil Corporation	IRFF330	326Kb / 7P	3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
Tak Cheong Electronics ...	TFP730	345Kb / 7P	N-Channel Power MOSFET 5.5A, 400V, 0.95廓
Tak Cheong Electronics ...	TFF730	325Kb / 7P	N-Channel Power MOSFET 5.5A, 400V, 0.95廓
STMicroelectronics	IRF730	94Kb / 8P	N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET
Fairchild Semiconductor	2N6759	138Kb / 5P	N-Channel Power MOSFETs, 5.5A, 350V/400V
Intersil Corporation	IRFF230	327Kb / 7P	5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET

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