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2SJ574 Folha de dados(PDF) 2 Page - Renesas Technology Corp |
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2SJ574 Folha de dados(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page 2SJ574 Preliminary R07DS0574EJ0500 Rev.5.00 Page 2 of 7 Jan 10, 2014 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS –30 — — V ID = –100 μA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 μA, VDS = 0 Zero gate voltage drain current IDSS — — –1 μA VDS = –30 V, VGS = 0 Gate to source leak current IGSS — — ±5 μA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS(off) –1.3 — –2.3 V ID = –10 μA, VDS = –5 V Static drain to source on state resistance RDS(on) — 1.1 1.3 Ω ID = –150 mA, VGS = –10 V Note 3 RDS(on) — 2.2 3.1 Ω ID = –150 mA, VGS = –4 V Note 3 Forward transfer admittance |yfs| 195 300 — mS ID = –150 mA, VDS = –10 V Note 3 Input capacitance Ciss — 50 — pF VDS = –10 V VGS = 0 f = 1 MHz Output capacitance Coss — 40 — pF Reverse transfer capacitance Crss — 15 — pF Turn-on delay time td(on) — 20 — ns ID = –150 mA, VGS = –10 V RL = 66.6 Ω Rise time tr — 50 — ns Turn-off delay time td(off) — 110 — ns Fall time tf — 105 — ns Note: 3. Pulse test |
Nº de peça semelhante - 2SJ574_15 |
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Descrição semelhante - 2SJ574_15 |
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