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2SJ574 Folha de dados(PDF) 2 Page - Renesas Technology Corp

Nome de Peças 2SJ574
Descrição Electrónicos  Silicon P Channel MOS FET High Speed Switching
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Fabricante Electrônico  RENESAS [Renesas Technology Corp]
Página de início  http://www.renesas.com
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2SJ574 Folha de dados(HTML) 2 Page - Renesas Technology Corp

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2SJ574
Preliminary
R07DS0574EJ0500 Rev.5.00
Page 2 of 7
Jan 10, 2014
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
–30
V
ID = –100
μA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG = ±100
μA, VDS = 0
Zero gate voltage drain current
IDSS
–1
μA
VDS = –30 V, VGS = 0
Gate to source leak current
IGSS
±5
μA
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
–1.3
–2.3
V
ID = –10
μA, VDS = –5 V
Static drain to source on state
resistance
RDS(on)
1.1
1.3
Ω
ID = –150 mA, VGS = –10 V
Note 3
RDS(on)
2.2
3.1
Ω
ID = –150 mA, VGS = –4 V
Note 3
Forward transfer admittance
|yfs|
195
300
mS
ID = –150 mA, VDS = –10 V
Note 3
Input capacitance
Ciss
50
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Output capacitance
Coss
40
pF
Reverse transfer capacitance
Crss
15
pF
Turn-on delay time
td(on)
20
ns
ID = –150 mA, VGS = –10 V
RL = 66.6
Ω
Rise time
tr
50
ns
Turn-off delay time
td(off)
110
ns
Fall time
tf
105
ns
Note: 3. Pulse test


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