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IRF7205 Folha de dados(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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IRF7205 Folha de dados(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 5 page SMD Type www.kexin.com.cn 2 MOSFET P-Channel MOSFET IRF7205 (KRF7205) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V VDS=-24V, VGS=0V -1 VDS=-15V, VGS=0V, TJ=70℃ -5 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1 -3 V VGS=-10V, ID=-4.6A (Note.1) 70 VGS=-4.5V, ID=-2A (Note.1) 130 Forward Transconductance gFS VDS=-15V, ID=-4.6A (Note.1) 6.6 S Input Capacitance Ciss 870 Output Capacitance Coss 720 Reverse Transfer Capacitance Crss 220 Total Gate Charge Qg 40 Gate Source Charge Qgs 5.2 Gate Drain Charge Qgd 7.5 Turn-On DelayTime td(on) 30 Turn-On Rise Time tr 60 Turn-Off DelayTime td(off) 150 Turn-Off Fall Time tf 100 Body Diode Reverse Recovery Time trr 100 Body Diode Reverse Recovery Charge Qrr 180 nC Internal Drain Inductance LD 2.5 Internal Source Inductance LS 4 Continuous Source Current (Body Diode) IS -2.5 Pulsed Source Current (Body Diode) ISM -15 Diode Forward Voltage VSD IS=-1.25A,VGS=0V, TJ=25℃ (Note.1) -1.2 V A pF nC IF=-4.6A, dI/dt=100A/μs,TJ=25℃ nH ns Zero Gate Voltage Drain Current IDSS uA mΩ VDS=-15V,ID=-1A, RL=10Ω,RG=6Ω (Note.1) RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=-10V, f=1MHz VGS=-10V, VDS=-15V, ID=-4.6A (Note.1) Note.1: Pulse width ≤ 300us; duty cycle ≤ 2%. Between lead,6mm(0.25in.) from package and center of die contact S D G l o b m y s T E F S O M e h t g n i w o h s e s r e v e r l a r g e t n i p-n junction diode. S D G ■ Marking 7205 KC**** Marking |
Nº de peça semelhante - IRF7205 |
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Descrição semelhante - IRF7205 |
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