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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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SI2301DS Folha de dados(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2301DS Folha de dados(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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4 / 4 page  SMD Type www.kexin.com.cn 4 MOSFET . P-Channel Enhancement MOSFET ■ Typical Characterisitics 0.01 0.10 1.00 10.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 0 50 100 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 Source-Drain Diode Forward V oltage On-Resistance vs. Gate-to-Source Voltage Threshold V oltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 30 VSD V ) V ( e g a tl o V n i a r D - o t- e c r u o S - GS - Gate-to-Source Voltage (V) TJ - Temperature ( C) Time (sec) 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 ID = 2.8 A ID = 250 A 10 1 10 T C = 25 C Single Pulse 14 12 8 4 0 T J = 25 C T J = 150 C 2 6 10 SI2301DS (KI2301DS) |
Nº de peça semelhante - SI2301DS |
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Descrição semelhante - SI2301DS |
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