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SI2307BDS Folha de dados(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças SI2307BDS
Descrição Electrónicos  P-Channel Enhancement MOSFET
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2307BDS Folha de dados(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
4
MOSFET
.
P-Channel Enhancement MOSFET
SI2307BDS (KI2307BDS)
Typical Characterisitics
Source-Drain Diode Forward Voltage
Threshold Voltage
T J = 150 °C
VSD - Source-to-Drain Voltage (V)
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
T J = 25 °C
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
0.3
- 50
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
ID = 250µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
I D = 3.2 A
Time (s)
TA = 25 °C
10
8
6
4
2
0
0.01
0.1
1
10
100
1000
Safe Operating Area, Junction-to-Case
Square Wave Pulse Duration (s)
100
1
0.1
1
10
100
0.001
10
0.1
TA = 25 °C
Single Pulse
10 ms
100 ms
10 µs
100 µs
1 ms
10 s, 1 s
DC, 100 s
0.01
Limited by RDS(on)*
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified


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