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SI2325DS-HF-3 Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças SI2325DS-HF-3
Descrição Electrónicos  P-Channel MOSFET
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2325DS-HF-3 Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
MOSFET
Features
VDS (V) =-150V
ID =-0.69A (VGS =-10V)
RDS(ON) < 1.2Ω (VGS =-10V)
RDS(ON) < 1.3Ω (VGS =-6V)
G
S
D
2
3
1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Ta = 25℃
-0.69
-0.53
Ta = 70℃
-0.55
-0.43
Pulsed Drain Current
IDM
Single-Pluse Avalanche Current
L=1.0mH
IAS
Single-Pulse Avalanche Energy
L=1.0mH
EAS
mJ
Power Dissipation
Ta = 25℃
1.25
0.75
Ta = 70℃
0.8
0.48
Thermal Resistance.Junction- to-Ambient t≤5 sec
Steady State
Thermal Resistance.Junction- to-Foot
RthJF
Junction Temperature
TJ
Storage Temperature Range
Tstg
4.5
A
1.01
100
166
50
150
-55 to 150
W
RthJA
-150
±
20
ID
V
/W
-1.6
PD
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
P-Channel MOSFET
SI2325DS-HF (KI2325DS-HF)
0.4 +0.1
-0.1
2.9 +0.2
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.2
1
2
3
Unit: mm
SOT-23-3
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain


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