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SI5504DC Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças SI5504DC
Descrição Electrónicos  Complementary power Trench MOSFET
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI5504DC Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
MOSFET
Complementary power Trench MOSFET
SI5504DC (KI5504DC)
■
Features
●
N-Channel：VDS=30V ID= 3.9A
●
RDS(ON) ＜ 85mΩ (VGS = 10V)
●
RDS(ON) ＜ 143mΩ (VGS = 4.5 V)
●
P-Channel：VDS=-30V ID=- 2.8A
●
RDS(ON) ＜ 165mΩ (VGS =-10V)
●
RDS(ON) ＜ 290mΩ (VGS =-4.5V)
■
Absolute Maximum Ratings Ta = 25℃
Unit
5 Secs
Steady State
5 Secs
Steady State
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Ta = 25℃
3.9
2.9
-2.8
- 2.1
Ta = 85℃
2.8
2.1
- 2
-1.5
Pulsed Drain Current
IDM
Power Dissipation
Ta = 25℃
2.1
1.1
2.1
1.1
Ta = 85℃
1.1
0.6
1.1
0.6
Thermal Resistance.Junction- to-Ambient (Note.1)
RthJA
60
110
60
110
Thermal Resistance.Junction- to-Case
RthJC
-
40
-
40
Junction Temperature
TJ
Storage Temperature Range
Tstg
N-Channel
P-Channel
Parameter
Symbol
PD
A
W
ID
±
10
℃
V
℃
/W
30
-30
±
20
150
-55 to 150
Note.1: Surface Mounted on 1” x 1” FR4 Board.
D1
G1
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
1206-8 chipFET (Chip-8)


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