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BC808 Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Nome de Peças BC808
Descrição Electrónicos  PNP Plastic Encapsulated Transistor
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Fabricante Electrônico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de início  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BC808 Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  BC808_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH BC808_15 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH BC808_15 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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BC808
-0.8A , -30V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
15-Jul-2011 Rev. A
Page 1 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
1
Base
2
Emitter
Collector
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Suitable for AF-Driver stages and low power output stages
Complementary to BC818
CLASSIFICATION OF hFE(1)
Product-Rank
BC808-16
BC808-25
BC808-40
Range
100~250
160~400
250~630
Marking Code
5E
5F
5G
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-23
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
-30
V
Collector to Emitter Voltage
VCEO
-25
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current - Continuous
IC
-800
mA
Collector Power Dissipation
PC
300
mW
Junction, Storage Temperature
TJ, TSTG
150, -65 ~ 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
-30
-
-
V
IC= -100µA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
-25
-
-
V
IC= -10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V
IE= -100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µ
A
VCB= -25V, IE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µ
A
VEB= -4V, IC=0
DC Current Gain
hFE (1)
100
-
630
VCE= -1V, IC= -100mA
hFE (2)
60
-
-
VCE= -1V, IC= -300mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
-0.7
V
IC= -500mA, IB= -50mA
Base to Emitter Saturation Voltage
VBE
-
-
-1.2
V
VCE= -1V, IC= -300mA
Transition Frequency
fT
-
100
-
MHz
VCE= -5V, IC= -10mA, f=50MHZ
Collector output capacitance
Cob
-
12
-
pF
VCB= -10V, IE=0, f=1MHZ
SOT-23
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
2.80
3.04
G
0.09
0.18
B
2.10
2.55
H
0.45
0.60
C
1.20
1.40
J
0.08
0.177
D
0.89
1.15
K
0.6 REF.
E
1.78
2.04
L
0.89
1.02
F
0.30
0.50


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