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ES11M Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Nome de Peças ES11M
Descrição Electrónicos  1.0 Amp Surface Mount Efficient Fast Rectifiers
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Fabricante Electrônico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de início  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

ES11M Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  ES11M_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH ES11M_15 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
ES11M~ES15M
50V ~ 600V
1.0 Amp Surface Mount Efficient Fast Rectifiers
09-Dec-2011 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Small plastic SMD package.
TRR less than 25nS for high efficiency
Low forward drop down voltage
High surge and high current capability.
Superfast recovery time for switching mode application.
Glass-passivated chip junction.
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94-V0 rate flame retardant
Weight: 0.0270 g (approximately)
MARKING
Part Number
Marking
Part Number
Marking
ES11M
E3
ES14M
E4
ES12M
E3
ES15M
E5
ES13M
E3
PACKAGING INFORMATION
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Part Number
Parameters
Symbol
ES11M
ES12M
ES13M
ES14M
ES15M
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
V
Maximum Reverse Voltage
VR
50
100
200
400
600
V
Maximum Forward Voltage @ IF=1A
VF
0.875
1.25
1.75
V
Maximum Average Forward Rectified Current
@TA=55°C
IO
1.0
A
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load (JEDEC
method)
IFSM
30
A
TA=25°C
5
Maximum DC Reverse Current at
Rated DC Blocking Voltage
TA=125°C
IR
100
µA
Reverse Recovery Time
TRR
25
nS
Typical Junction Capacitance
1
CJ
15
pF
Storage and Operating Temperature Range
TSTG, TJ
-65~175, -55~150
°C
Note:
1.
f=1MHz and applied 4V DC reverse voltage
Package
MPQ
Leader Size
SOD-123M
2.5K
7 inch
SOD-123M
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
3.50
3.90
D
3.60 (MAX.)
B
1.40
1.80
E
0.80 (TYP.)
C
1.30
1.70
F
0.30 (TYP.)
E
E
F
B
C
D
A


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