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IR2131 Folha de dados(PDF) 6 Page - International Rectifier |
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IR2131 Folha de dados(HTML) 6 Page - International Rectifier |
6 / 8 page IR2131 B-162 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL Thickness of Gate Oxide 800Å Connections Material Poly Silicon First Width 4 µm Layer Spacing 6 µm Thickness 5000Å Material Al - Si (Si: 1.0% ±0.1%) Second Width 6 µm Layer Spacing 9 µm Thickness 20,000Å Contact Hole Dimension 8 µm X 8 µm Insulation Layer Material PSG (SiO2) Thickness 1.5 µm Passivation Material PSG (SiO2) Thickness 1.5 µm Method of Saw Full Cut Method of Die Bond Ablebond 84 - 1 Wire Bond Method Thermo Sonic Material Au (1.0 mil / 1.3 mil) Leadframe Material Cu Die Area Ag Lead Plating Pb : Sn (37 : 63) Package Types 28 Lead PDIP & SOIC / 44 Lead PLCC Materials EME6300 / MP150 / MP190 Remarks: Device Information Process & Design Rule HVDCMOS 4.0 µm Transistor Count 700 Die Size 167 X 141 X 26 (mil) Die Outline To Order Next Data Sheet Index Previous Datasheet |
Nº de peça semelhante - IR2131 |
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Descrição semelhante - IR2131 |
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