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IRF830S Folha de dados(PDF) 4 Page - Kersemi Electronic Co., Ltd. |
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IRF830S Folha de dados(HTML) 4 Page - Kersemi Electronic Co., Ltd. |
4 / 8 page Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1500 1250 1000 750 0 250 500 100 101 VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91064_05 91064_06 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 8 40 32 24 16 I D = 3.1 A V DS = 100 V V DS = 250 V For test circuit see figure 13 V DS = 400 V 101 100 VSD, Source-to-Drain Voltage (V) 0.4 1.2 1.0 0.8 0.6 25 °C 150 °C V GS = 0 V 91064_07 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 150 °C Single Pulse 10-2 102 0.1 2 5 0.1 2 5 1 2 5 10 2 5 25 1 25 10 25 102 25 103 25 104 91064_08 IRF830S, SiHF830S 2014-8-28 4 www.kersemi.com |
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Descrição semelhante - IRF830S |
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