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IRF1704 Folha de dados(PDF) 2 Page - International Rectifier |
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IRF1704 Folha de dados(HTML) 2 Page - International Rectifier |
2 / 8 page IRF1704 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.004 Ω VGS = 10V, ID = 100A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 110 ––– ––– SVDS = 25V, ID = 100A ––– ––– 20 µA VDS = 40V, VGS = 0V ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 175°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Qg Total Gate Charge ––– 170 260 ID = 100A Qgs Gate-to-Source Charge ––– 42 63 nC VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– 39 59 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 16 ––– VDD = 20V tr Rise Time ––– 120 ––– ID = 100A td(off) Turn-Off Delay Time ––– 73 ––– RG = 2.5Ω tf Fall Time ––– 37 ––– VGS = 10V,See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 6950 ––– VGS = 0V Coss Output Capacitance ––– 1660 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 200 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 6250 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 1470 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 2320 ––– VGS = 0V, VDS = 0V to 32V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) ISD ≤ 100A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 200°C Notes: Starting TJ = 25°C, L = 0.13mH, VGS = 10V RG = 25Ω, IAS = 100A. (See Figure 12) Pulse width ≤ 400µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 100A, VGS = 0V trr Reverse Recovery Time ––– 73 110 ns TJ = 25°C, IF = 100A Qrr Reverse RecoveryCharge ––– 200 300 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 170 680 A
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A At the point of termination of the leads at the PCB, the temp. should be limited to 175°C. The device case temperature is allowed to be higher |
Nº de peça semelhante - IRF1704 |
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Descrição semelhante - IRF1704 |
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