IRF7521D1 datasheet(6/8 Pages) KERSEMI

Nome de Peças	IRF7521D1

Descrição Electrónicos	Power MOSFET and Schottky Diode

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Fabricante Electrônico	KERSEMI [Kersemi Electronic Co., Ltd.]

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Schottky Diode Characteristics

Fig. 13 - Typical Values of Reverse

Current Vs. Reverse Voltage

Fig. 12 -Typical Forward Voltage Drop Characteristics

0.0001

0.001

0.01

0.1

1

10

100

0

4

8

12

16

20

R

100°C

75°C

50°C

25°C

Reverse Voltage - V (V)

125°C

)

T = 150°C

J

0.1

1

10

0.0

0.2

0.4

0.6

0.8

1.0

FM

Forward Voltage D rop - V

(V )

T = 150°C

T = 125°C

T = 25°C

J

Fig.14 - Maximum Allowable Ambient

Temp. Vs. Forward Current

0

20

40

60

80

100

120

140

160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

F(AV )

A

Avera ge F orw ard C urrent - I

(A )

D = 3/4

D = 1/2

D = 1/3

D = 1/4

D = 1/5

DC

V = 20 V

R

= 100°C/W

Sq uare wave

thJA

r

Forward Votage Drop - VF ( V)

IRF7521D1

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2014-8-8

Nº de peça semelhante - IRF7521D1

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
International Rectifier	IRF7521D1	177Kb / 8P	FETKY??MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)
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Descrição semelhante - IRF7521D1

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