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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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IRF7204 Folha de dados(PDF) 2 Page - International Rectifier |
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IRF7204 Folha de dados(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7204 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.022 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.060 VGS = -10V, ID = -5.3A ––– ––– 0.10 VGS = -4.5V, ID = -2.0A VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA gfs Forward Transconductance ––– 7.9 ––– S VDS = -15V, ID = -5.3A ––– ––– -25 VDS = -16V, VGS = 0V ––– ––– -250 VDS = -16V, VGS = 0V, TJ = 125 °C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 25 ––– ID = -5.3A Qgs Gate-to-Source Charge ––– 5.0 ––– nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 8.0 ––– VGS = -10V td(on) Turn-On Delay Time ––– 14 30 VDD = -10V tr Rise Time ––– 26 60 ID = -1.0A td(off) Turn-Off Delay Time ––– 100 150 RG = 6.0 Ω tf Fall Time ––– 68 100 RD = 10Ω Between lead,6mm(0.25in.) from package and center of die contact Ciss Input Capacitance ––– 860 ––– VGS = 0V Coss Output Capacitance ––– 750 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 230 ––– ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V trr Reverse Recovery Time ––– 85 100 ns TJ = 25°C, IF = -2.4A Qrr Reverse RecoveryCharge ––– 77 120 nC di/dt = 100A/µs ton Forward Turn-On Time Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– -15 ––– ––– -2.5 A IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance ––– 4.0 ––– LD Internal Drain Inductance ––– 2.5 ––– nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance Notes: Repetitive rating; pulse width limited by max. junction temperature. ISD ≤ -5.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. S D G S D G |
Nº de peça semelhante - IRF7204 |
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Descrição semelhante - IRF7204 |
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