IRF7534D1 datasheet(1/8 Pages) IRF

Nome de Peças	IRF7534D1

Descrição Electrónicos	FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)

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Fabricante Electrônico	IRF [International Rectifier]

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FETKY MOSFET & Schottky Diode

3/22/00

IRF7534D1

Absolute Maximum Ratings

www.irf.com

1

Thermal Resistance

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

100

°C/W

Parameter

Max.

Units

VDS

Drain-Source Voltage

-20

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ -4.5V

-4.3

ID @ TA = 70°C

Continuous Drain Current, VGS @ -4.5V

-3.4

A

IDM

Pulsed Drain Current

-34

PD @TA = 25°C

Maximum Power Dissipation

1.25

W

PD @TA = 70°C

Maximum Power Dissipation

0.8

W

Linear Derating Factor

10

mW/°C

VGS

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt

1.1

V/ns

TJ , TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

VDSS = -20V

RDS(on) = 0.055Ω

Schottky Vf=0.39V

Micro8

™

q

Co-packaged HEXFET® power

MOSFET and Schottky diode

q

Ultra Low On-Resistance

MOSFET

q

Trench technology

q

Micro8TM Footprint

q

Available in Tape & Reel

Description

PD -93864

The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer

an innovative, board space saving solution for switching regulator and power

management applications. International Rectifier utilizes advanced processing

techniques to achieve extremely low on-resistance per silicon area. Combining this

technology with International Rectifier’s low forward drop Schottky rectifiers results in

an extremely efficient device suitable for use in a wide variety of portable electronics

applications, such as cell phones, PDAs, etc.

The Micro8TM package makes an ideal device for applications where printed circuit

board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to

fit easily into extremely thin application environments such as portable electronics

T op V ie w

8

1

2

3

4

5

6

7

A

S

G

D

K

Notes:

Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)

ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

Pulse width ≤ 300µs – duty cycle ≤ 2%

When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

Nº de peça semelhante - IRF7534D1

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International Rectifier	IRF7534D1PBF	385Kb / 8P	MOSFET SCHOTTKY DIODE

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