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IRF7606 Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRF7606
Descrição Electrónicos  Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7606 Folha de dados(HTML) 2 Page - International Rectifier

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IRF7606
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -2.4A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
43
64
ns
TJ = 25°C, IF = -2.4A
Qrr
Reverse RecoveryCharge
–––
50
76
nC
di/dt = -100A/µs
ƒ
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.024 –––
V/°C
Reference to 25°C, ID = -1mA
–––
–––
0.09
VGS = -10V, ID = -2.4A
ƒ
–––
–––
0.15
VGS = -4.5V, ID = -1.2A
ƒ
VGS(th)
Gate Threshold Voltage
-1.0
–––
–––
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
2.3
–––
–––
S
VDS = -10V, ID = -1.2A
–––
–––
-1.0
VDS = -24V, VGS = 0V
–––
–––
-25
VDS = -24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
20
30
ID = -2.4A
Qgs
Gate-to-Source Charge
–––
2.1
3.1
nC
VDS = -24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
7.6
11
VGS = -10V, See Fig. 6 and 9
ƒ
td(on)
Turn-On Delay Time
–––
13
–––
VDD = -15V
tr
Rise Time
–––
20
–––
ID = -2.4A
td(off)
Turn-Off Delay Time
–––
43
–––
RG = 6.2
tf
Fall Time
–––
39
–––
RD = 6.2
Ω, See Fig. 10 ƒ
Ciss
Input Capacitance
–––
520
–––
VGS = 0V
Coss
Output Capacitance
–––
300
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
140
–––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
‚ ISD ≤ -2.4A, di/dt ≤ -130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
Source-Drain Ratings and Characteristics
A
-19
–––
–––
–––
-1.8
–––
S
D
G
„ Surface mounted on FR-4 board, t ≤ 10sec.


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