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IRF7705 Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF7705
Descrição Electrónicos  Power MOSFET(Vdss=-30V)
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7705 Folha de dados(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
IRF7705
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.2mm)
l Available in Tape & Reel
TSSOP-8
Parameter
Max.
Units
VDS
Drain- Source Voltage
-30
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-8.0
ID @ TC = 70°C
Continuous Drain Current, VGS @ -10V
-6.0
A
IDM
Pulsed Drain Current

-30
PD @TC = 25°C
Power Dissipation
ƒ
1.5
PD @TC = 70°C
Power Dissipation
ƒ
0.96
Linear Derating Factor
0.012
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
83
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com
1
06/05/01
PD - 94001A
VDSS
RDS(on) max (mΩ)
Ω)
Ω)
Ω)
Ω)
ID
-30V
18 @VGS = -10V
-8.0A
30 @VGS = -4.5V
-6.0A
4 = G
3 = S
2 = S
1 = D
1
2
3
4
G
D
S
5
6
7
8
8 = D
7 = S
6 = S
5 = D


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