IRF9410 datasheet(2/7 Pages) IRF

Nome de Peças	IRF9410

Descrição Electrónicos	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

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Fabricante Electrônico	IRF [International Rectifier]

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IRF9410

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

30

–––

V

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.024 –––

V/°C

Reference to 25°C, ID = 1mA

–––

0.024 0.030

VGS = 10V, ID = 7.0A

–––

0.032 0.040

Ω

VGS = 5.0V, ID = 4.0A

–––

0.037 0.050

VGS = 4.5V, ID = 3.5A

VGS(th)

Gate Threshold Voltage

1.0

–––

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

–––

14

–––

S

VDS = 15V, ID = 7.0A

–––

2.0

µA

VDS = 24V, VGS = 0V

–––

25

VDS = 24V, VGS = 0V, TJ = 55°C

Gate-to-Source Forward Leakage

–––

100

nA

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -20V

Qg

Total Gate Charge

–––

18

27

ID = 2.0A

Qgs

Gate-to-Source Charge

–––

2.4

3.6

nC

VDS = 15V

Qgd

Gate-to-Drain ("Miller") Charge

–––

4.9

7.4

VGS = 10V, See Fig. 10

td(on)

Turn-On Delay Time

–––

7.3

15

VDD = 25V

tr

Rise Time

–––

8.3

17

ns

ID = 1.0A

td(off)

Turn-Off Delay Time

–––

23

46

RG = 6.0Ω, VGS = 10V

tf

Fall Time

–––

17

34

RD = 25Ω

Ciss

Input Capacitance

–––

550

–––

VGS = 0V

Coss

Output Capacitance

–––

260

–––

pF

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

100

–––

ƒ = 1.0MHz, See Fig. 9

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

–––

0.78

1.0

V

TJ = 25°C, IS = 2.0A, VGS = 0V

trr

Reverse Recovery Time

–––

40

80

ns

TJ = 25°C, IF = 2.0A

Qrr

Reverse RecoveryCharge

–––

63

130

nC

di/dt = 100A/µs

Source-Drain Ratings and Characteristics

–––

37

2.8

A

S

D

G

Surface mounted on FR-4 board, t ≤ 10sec.

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

Starting TJ = 25°C, L = 6.6mH

RG = 25Ω, IAS = 4.6A.

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

IDSS

Drain-to-Source Leakage Current

RDS(on)

Static Drain-to-Source On-Resistance

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