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IRF9956 Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF9956
Descrição Electrónicos  Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF9956 Folha de dados(HTML) 1 Page - International Rectifier

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PRELIMINARY
HEXFET® Power MOSFET
PD - 9.1559A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
8/25/97
SO-8
VDSS = 30V
RDS(on) = 0.10Ω
IRF9956
Description
Recommended upgrade: IRF7303 or IRF7313
Lower profile/smaller equivalent: IRF7503
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TA = 25°C
3.5
TA = 70°C
2.8
Pulsed Drain Current
IDM
16
Continuous Source Current (Diode Conduction)
IS
1.7
TA = 25°C
2.0
TA = 70°C
1.3
Single Pulse Avalanche Energy
‚
EAS
44
mJ
Avalanche Current
IAR
2.0
A
Repetitive Avalanche Energy
EAR
0.20
mJ
Peak Diode Recovery dv/dt
ƒ
dv/dt
5.0
V/ ns
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient
…
RθJA
62.5
°C/W
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Continuous Drain Current
…
Maximum Power Dissipation
…
A
ID
PD
V
W
D1
D1
D2
D2
G1
S2
G2
S1
T o p V iew
8
1
2
3
4
5
6
7
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated


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