IRF9Z34N datasheet(1/8 Pages) IRF

Nome de Peças	IRF9Z34N

Descrição Electrónicos	Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)

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Fabricante Electrônico	IRF [International Rectifier]

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IRF9Z34N

HEXFET® Power MOSFET

PD - 9.1485B

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ -10V

-19

ID @ TC = 100°C

Continuous Drain Current, VGS @ -10V

-14

A

IDM

Pulsed Drain Current

-68

PD @TC = 25°C

Power Dissipation

68

W

Linear Derating Factor

0.45

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

180

mJ

IAR

Avalanche Current

-10

A

EAR

Repetitive Avalanche Energy

6.8

mJ

dv/dt

Peak Diode Recovery dv/dt

-5.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

2.2

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

Thermal Resistance

VDSS = -55V

RDS(on) = 0.10Ω

ID = -19A

TO-220AB

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l P-Channel

l Fully Avalanche Rated

Description

8/25/97

S

D

G

Nº de peça semelhante - IRF9Z34N

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Kersemi Electronic Co.,...	IRF9Z34N	1Mb / 10P	Advanced Planar Technology
Inchange Semiconductor ...	IRF9Z34N	335Kb / 2P	P-Channel MOSFET Transistor
International Rectifier	IRF9Z34NL	162Kb / 10P	Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
Kersemi Electronic Co.,...	IRF9Z34NL	1Mb / 10P	Advanced Process Technology
Inchange Semiconductor ...	IRF9Z34NL	273Kb / 2P	isc P-Channel MOSFET Transistor

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Descrição semelhante - IRF9Z34N

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	IRFR2605	345Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
	IRFD024	172Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)
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