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IRFP31N50L Folha de dados(PDF) 2 Page - International Rectifier |
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IRFP31N50L Folha de dados(HTML) 2 Page - International Rectifier |
2 / 8 page IRFP31N50L 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 15 ––– ––– SVDS = 50V, ID = 19A Qg Total Gate Charge ––– ––– 210 ID = 31A Qgs Gate-to-Source Charge ––– ––– 58 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 100 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 28 ––– VDD = 250V tr Rise Time ––– 115 ––– ID = 31A td(off) Turn-Off Delay Time ––– 54 ––– RG = 4.3Ω tf Fall Time ––– 53 ––– VGS = 10V,See Fig. 10 Ciss Input Capacitance ––– 5000 ––– VGS = 0V Coss Output Capacitance ––– 553 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 59 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 6630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 155 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 276 ––– VGS = 0V, VDS = 0V to 400V Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.28 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.15 0.18 Ω VGS = 10V, ID = 19A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA ––– ––– 50 µA VDS = 500V, VGS = 0V ––– ––– 2.0 mA VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) I SD = 31A, di/dt ≤ 422A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Notes: Starting T J = 25°C, L = 1mH, RG = 25Ω, IAS = 31A (See Figure 12a). Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 460 mJ IAR Avalanche Current ––– 31 A EAR Repetitive Avalanche Energy ––– 46 mJ Avalanche Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.26 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance |
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