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SM5100B Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Nome de Peças SM5100B
Descrição Electrónicos  5.0Amp Schottky Barrier Rectifiers
Download  2 Pages
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Fabricante Electrônico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de início  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SM5100B Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SM5100B
Voltage 100V
5.0Amp Schottky Barrier Rectifiers
20-Dec-2013 Rev.D
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Current Capability
Extremely Low Thermal Resistance
For Surface Mount Application
Higher Temp Soldering : 250°C for 10 Seconds at Terminals
Low Revise Current
MECHANICAL DATA
Case: Molded Plastic
Epoxy: UL 94V-0 Rate Flame Retardant
Lead: Axial Leads, Solderable per MIL-STD-202
method 208 Guaranteed
Polarity: Color Band Denotes Cathode End
Mounting Position: Any
PACKAGE INFORMATION
Package
MPQ
Leader Size
SMB
3K
13’ inch
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Ratings
Unit
Peak Repetitive Peak reverse voltage
VRRM
100
V
Working Peak Reverse Voltage
VRWM
100
V
Maximum DC Blocking Voltage
VR
100
V
Average Forward Current @TJ=25°C
IF(AV)
5
A
Peak Forward Current @ 8.3 ms Half Sine
IFSM
125
A
IFM = 5.0 A, TA = 25°C
0.82
IFM = 5.0 A, TA = 75°C
0.73
Maximum Instantaneous Forward
Voltage
IFM = 5.0 A, TA = 125°C
VF
0.65
V
TJ = 25°C
100
Maximum DC Reverse Current
At Rated DC Blocking Voltage
4
TJ = 100°C
IR
800
μA
Typical Junction Capacitance
1
CJ
350
pF
Typical Thermal Resistance
2
RθJA
60
°C/W
Typical Thermal Resistance
3
RθJC
20
°C/W
Device Power Dissipation
PD
2
W
Voltage Rate of Chance (Rated VR)
dv/dt
10000
V / μs
Operating Temperature Range
TJ
-50~150
°C
Storage temperature
TSTG
-65~150
°C
Notes:
1.
Measured at 1MHz and applied reverse voltage of 5.0 V D.C.
2.
Thermal Resistance Junction to Ambient.
3.
Thermal Resistance Junction to Case.
4.
Pulse Test:Pulse Width ≦ 300 μs, Duty Cycle
2.
0%.
SMB
A
B
E
G
D
F
C
H
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.91
2.20
E
-
0.203
B
4.06
4.70
F
5.08
5.59
C
3.30
3.94
G
0.76
1.52
D
2.13
2.44
H
0.15
0.305


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