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2SJ496 Folha de dados(PDF) 3 Page - Renesas Technology Corp

Nome de Peças 2SJ496
Descrição Electrónicos  Silicon P Channel MOS FET
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Fabricante Electrônico  RENESAS [Renesas Technology Corp]
Página de início  http://www.renesas.com
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2SJ496 Folha de dados(HTML) 3 Page - Renesas Technology Corp

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2SJ496
Preliminary
R07DS0433EJ0400 Rev.4.00
Page 3 of 7
Jun 07, 2011
Main Characteristics
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0–2
–4
–6
–8
–10
–10
0
–2
–4
–6
–8
0
–1–2–3–4–5
Tc = 75°C
1.6
0
0.4
0.8
1.2
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–4 V
–3 V
–2.5 V
–3.5 V
VGS = –2 V
Ta = 25°C
Pulse Test
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
–30
–3
–10
–0.03
–1
–0.3
–0.1
–0.01
–0.1
–0.3
–1
–3
–10
–30
–100
–100
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
1 ms
10
μs 100 μs
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–4
–8
–12
–16
–20
Pulse Test
ID = –5 A
–2 A
–1 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–0.3
–10
–30
–0.1
–3
–1
–100
1
0.5
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C


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