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2SJ496 Folha de dados(PDF) 3 Page - Renesas Technology Corp |
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2SJ496 Folha de dados(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page 2SJ496 Preliminary R07DS0433EJ0400 Rev.4.00 Page 3 of 7 Jun 07, 2011 Main Characteristics Ambient Temperature Ta (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics –10 0 –2 –4 –6 –8 0–2 –4 –6 –8 –10 –10 0 –2 –4 –6 –8 0 –1–2–3–4–5 Tc = 75°C 1.6 0 0.4 0.8 1.2 0 50 100 150 200 VDS = –10 V Pulse Test –10 V –5 V –4 V –3 V –2.5 V –3.5 V VGS = –2 V Ta = 25°C Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area –30 –3 –10 –0.03 –1 –0.3 –0.1 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 –100 Ta = 25°C PW = 10 ms (1 shot) DC Operation 1 ms 10 μs 100 μs Operation in this area is limited by RDS (on) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 0 –0.2 –0.4 –0.6 –0.8 0 –4 –8 –12 –16 –20 Pulse Test ID = –5 A –2 A –1 A Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 0.2 0.1 0.02 0.05 0.01 –0.3 –10 –30 –0.1 –3 –1 –100 1 0.5 VGS = –4 V –10 V Pulse Test –25°C 25°C |
Nº de peça semelhante - 2SJ496_15 |
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Descrição semelhante - 2SJ496_15 |
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